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2
3
2
3
2 1 4
3
1
4
1
4
Parallel
Anti-Parallel
SO
2 T-
27
APT2X100D40J
APT2X101D40J
"UL Recognized"
ISOTOP (R)
file # E145592
APT2X101D40J APT2X100D40J
400V 100A 400V 100A
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode * * * * *
-Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2X101_100D40J UNIT
400
Volts
Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range
100 164 1000 -55 to 175
C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125C MIN TYP MAX UNIT
1.3 1.6 1.2
1.5
Volts
500 1000 260
pF
Microsemi Website - http://www.microsemi.com
053-4007 Rev F 9-2009
A
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MIN -
APT2X101_100D40J TYP MAX UNIT ns nC
Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -800A/s VR = 268V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 268V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 268V, TC = 25C
37 50 150 6 150 1050 13 90 2100 39 17 7
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT C/W oz g
.42 20 1.03 29.2 10 1.1
Torque
Maximum Terminal & Mounting Torque
lb*in N*m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.45
, THERMAL IMPEDANCE (C/W)
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9 0.7 0.5 0.3 0.1 0.05
10-4
Note:
PDM
t1 t2
JC
Z
SINGLE PULSE
10-3 10-2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1
1
RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-4007 Rev F 9-2009
TYPICAL PERFORMANCE CURVES
300 250 IF, FORWARD CURRENT (A) 200 150 100 50 0 TJ = 125C TJ = 150C 0 TJ = 25C TJ = -55C trr, REVERSE RECOVERY TIME (ns)
APT2X101_100D40J
160 140 100A 120 100 80 60 40 20 0 0
T =125C J V =268V
R
200A
50A
0.5 1 1.5 2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
T =125C J V =268V
R
400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =268V
R
200
2500 Qrr, REVERSE RECOVERY CHARGE (nC) 200A
200A 100A
35 30 25 20 15 10 5 0 0
2000
1500
50A 100A
1000
50A
500
0 200 400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IRRM Qrr trr Qrr trr
0
400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 200 180 160 140 IF(AV) (A) 120 100 80 60 40 20
Duty cycle = 0.5 T =150C
J
200
Kf, DYNAMIC PARAMETERS (Normalized to 800A/s)
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 3000 2500 2000 1500
0
100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
75
CJ, JUNCTION CAPACITANCE (pF)
1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
0
.3
053-4007 Rev F
500
9-2009
1000
APT2X101_100D40J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT50M50L2LL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anti-parallel
Parallel
APT2X100D40J
Anode 2
APT2X101D40J
Anode 1
Cathode 1 Cathode 1
9-2009
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
053-4007 Rev F
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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